IRG4PC50FD 600V 70A IGBT Power Transistor TO-247 Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode 03% Phase Margin 60°C Gain

03% Phase Margin  60°C Gain Margin  15dB

The Hall IC transforms the magnetic field created by the applied current flowing via this copper conduction route into a proportionate voltage

RDS(ON) < 50m‚¬ž¦ (VGS = -10V)

High surge capability

IRG4PC50FD 600V 70A IGBT Power Transistor TO-247 Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode 03% Phase Margin 60°C GainIt is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co packaged IGBTs are a natural extension of the well known IGBT range from International Rectifier. They combine the features of an IGBT and an ultrafast recovery diode into a single device, making them ideal for a variety of high voltage, high current, motor control, UPS, and power supply Applications. Features Fast: Optimized for medium operating frequencies ( 1 5 kHz in